2ED21824S06JXUMA1, Gate Drivers LEVEL SHIFT SOI /Код si-703608

Semiconductors\Power Management ICs\Gate DriversSilicon-on-Insulator (SOI) Gate Driver ICs Infineon Silicon-on-Insulator (SOI) Gate Driver ICs are level-shift high voltage gate driver ICs for IGBTs and MOSFETs. The SOI technology is a high-voltage, level-shift technology providing unique, measurable, and best-in-class advantages. These include integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that are causing latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.

Brand:	Infineon Technologies
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	15 ns
Logic Type:	CMOS, LSTTL
Manufacturer:	Infineon
Maximum Operating Temperature:	+125 C
Maximum Turn-Off Delay Time:	300 ns
Maximum Turn-On Delay Time:	300 ns
Minimum Operating Temperature:	-40 C
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Number of Drivers:	1 Driver
Number of Outputs:	1 Output
Operating Supply Current:	550 uA
Output Current:	2.5 A
Package/Case:	DSO-14
Packaging:	Reel, Cut Tape
Part # Aliases:	2ED21824S06J SP003244528
Pd - Power Dissipation:	1 W
Product Category:	Gate Drivers
Product Type:	Gate Drivers
Product:	IGBT, MOSFET Gate Drivers
Propagation Delay - Max:	300 ns
Rise Time:	15 ns
Shutdown:	Shutdown
Subcategory:	PMIC-Power Management ICs
Supply Voltage - Max:	20 V
Supply Voltage - Min:	10 V
Technology:	Si
Type:	Half-Bridge
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